document number: 94302 for technical questions, contact: diodestech@vishay.com www.vishay.com revision: 15-mar-10 1 schottky rectifier, 10 a vs-mbrb1035pbf, VS-MBRB1045PBF vishay high power products features ? 150 c t j operation ? to-220 and d 2 pak packages ? low forward voltage drop ? high frequency operation ? high purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance ? guard ring for enhanced ruggedness and long term reliability ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? halogen-free according to iec 61249-2-21 definition ? compliant to rohs directive 2002/95/ec ? aec-q101 qualified description this schottky rectifier has b een optimized for low reverse leakage at high temperature. the proprietary barrier technology allows for reliable operation up to 150 c junction tempera ture. typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. product summary i f(av) 10 a v r 35 v/45 v i rm 15 ma at 125 c d 2 pak anode 1 3 ba s e cathode 2 n/c major ratings and characteristics symbol characteristics values units i f(av) rectangular waveform 10 a i frm t c = 135 c 20 v rrm 35/45 v i fsm t p = 5 s sine 1060 a v f 10 apk, t j = 125 c 0.57 v t j range - 65 to 150 c voltage ratings parameter symbol vs-mbrb1035pbf VS-MBRB1045PBF units maximum dc reverse voltage v r 35 45 v maximum working peak reverse voltage v rwm absolute maximum ratings parameter symbol test co nditions values units maximum average forward current i f(av) t c = 135 c, rated v r 10 a peak repetitive forward current i frm rated v r , square wave, 20 khz, t c = 135 c 20 non-repetitive surge current i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 1060 surge applied at rated load conditions halfwave, single phase, 60 hz 150 non-repetitive avalanche energy e as t j = 25 c, i as = 2 a, l = 4 mh 8 mj repetitive avalanche current i ar current decaying linearly to zero in 1 s frequency limited by t j maximum v a = 1.5 x v r typical 2a
www.vishay.com for technical questions, contact: diodestech@vishay.com document number: 94302 2 revision: 15-mar-10 vs-mbrb1035pbf, VS-MBRB1045PBF vishay high power products schottky rectifier, 10 a note (1) pulse width < 300 s, duty cycle < 2 % electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm (1) 20 a t j = 25 c 0.84 v 10 a t j = 125 c 0.57 20 a 0.72 maximum instantaneous reverse current i rm (1) t j = 25 c rated dc voltage 0.1 ma t j = 125 c 15 threshold voltage v f(to) t j = t j maximum 0.354 v forward slope resistance r t 17.6 m maximum junction capacitance c t v r = 5 v dc (test signal range 100 khz to 1 mhz), 25 c 600 pf typical series inductance l s measured from top of termin al to mounting plane 8.0 nh maximum voltage rate of change dv/dt rated v r 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction temperature range t j - 65 to 150 c maximum storage temperature range t stg - 65 to 175 maximum thermal resistance, junction to case r thjc dc operation 2.0 c/w typical thermal resistance, case to heatsink r thcs mounting surface, smooth and greased (only for to-220) 0.50 approximate weight 2g 0.07 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style d 2 pak mbrb1035 mbrb1045
document number: 94302 for technical questions, contact: diodestech@vishay.com www.vishay.com revision: 15-mar-10 3 vs-mbrb1035pbf, VS-MBRB1045PBF schottky rectifier, 10 a vishay high power products fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 1 10 100 i f - instantaneous forward current (a) v fm - forward voltage drop (v) 0.4 0.6 1.0 1.4 1.8 0.8 1.2 1.6 0.2 t j = 150 c t j = 125 c t j = 25 c 0.0001 0.001 1 10 100 0.1 0.01 i r - reverse current (ma) v r - reverse voltage (v) 10 51520 40 45 25 30 35 0 t j = 150 c t j = 125 c t j = 100 c t j = 75 c t j = 50 c t j = 25 c 100 1000 c t - junction capacitance (pf) v r - reverse voltage (v) 20 10 30 40 50 0 t j = 25 c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) 100 10 p dm t 1 t 2 n otes: 1. d u ty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c d = 0.75 d = 0.50 d = 0.33 d = 0.25 d = 0.20 single p u lse (thermal resistance)
www.vishay.com for technical questions, contact: diodestech@vishay.com document number: 94302 4 revision: 15-mar-10 vs-mbrb1035pbf, VS-MBRB1045PBF vishay high power products schottky rectifier, 10 a fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - maximum non- repetitive surge current note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r 120 130 140 125 135 150 145 allowable case temperature (c) i f ( av ) - average forward current (a) 6 3912 15 0 dc see note (1) s qu are w a v e (d = 0.50) rated v r applied 0 6 8 4 2 10 average power loss (w) i f(av) - average forward current (a) 2 134 8 567 0 dc rms limit d = 0.20 d = 0.25 d = 0.33 d = 0.50 d = 0.75 100 1000 i fsm - non-repetitive surge current (a) t p - square wave pulse duration (s) 100 1000 10 000 10 at any rated load condition and w ith rated v rrm applied follo w ing s u rge
document number: 94302 for technical questions, contact: diodestech@vishay.com www.vishay.com revision: 15-mar-10 5 vs-mbrb1035pbf, VS-MBRB1045PBF schottky rectifier, 10 a vishay high power products ordering information table 2 - essential part number 3 - b = surface mount 4 - current rating (10 = 10 a) 5 - 7 - voltage ratings pbf = lead (pb)-free 6 - 35 = 35 v 45 = 45 v none = tube (50 pieces) trl = tape and reel (left oriented) trr = tape and reel (right oriented) 1 - hpp prod u ct s u ffix device code 5 13 24 67 vs- mbr b 10 45 trl pbf links to related documents dimensions www.vishay.com/doc?95046 part marking information www.vishay.com/doc?95054 packaging information www.vishay.com/doc?95032 spice model www.vishay.com/doc?95293
document number: 95046 for technical questions within your region, please contact one of the following: www.vishay.com revision: 31-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 d 2 pak outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and toleranc ing per asme y14.5 m-1994 (2) dimension d and e do not include mold flash. mold flash sh all not exceed 0.127 mm (0.005") per side. these dimens ions are measu red at the outmost extremes of the plastic body (3) thermal pad contour optional with in dimension e, l1, d1 and e1 (4) dimension b1 and c1 a pply to base metal only (5) datum a and b to be determined at datum plane h (6) controlling dimension: inch (7) outline conforms to jedec outline to-263ab symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.06 4.83 0.160 0.190 d1 6.86 8.00 0.270 0.315 3 a1 0.00 0.254 0.000 0.010 e 9.65 10.67 0.380 0.420 2, 3 b 0.51 0.99 0.020 0.039 e1 7.90 8.80 0.311 0.346 3 b1 0.51 0.89 0.020 0.035 4 e 2.54 bsc 0.100 bsc b2 1.14 1.78 0.045 0.070 h 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 4 l 1.78 2.79 0.070 0.110 c 0.38 0.74 0.015 0.029 l1 - 1.65 - 0.066 3 c1 0.38 0.58 0.015 0.023 4 l2 1.27 1.78 0.050 0.070 c2 1.14 1.65 0.045 0.065 l3 0.25 bsc 0.010 bsc d 8.51 9.65 0.335 0.380 2 l4 4.78 5.28 0.188 0.208 c b detail a c2 a a a 0.004 b m a lead tip (3) (3) view a - a (e) (d1) e1 b h a1 detail ?a? rotated 90 cw scale: 8 :1 l gauge plane 0 to 8 l3 l4 seating plane section b - b and c - c scale: none (4) (4) ( b , b 2) b 1, b 3 (c) c1 base metal plating conforms to jedec outline d 2 pak (smd-220) 13 2 d c a l2 e (2)(3) (2) 4 h bb 2 x b 2 x b 2 l1 0.010 a b mm (3) e 2 x pad layout min. 11.00 (0.43) min. 9.65 (0.3 8 ) min. 3. 8 1 (0.15) min. 2.32 (0.0 8 ) 17.90 (0.70) 15.00 (0.625) 2.64 (0.103) 2.41 (0.096) lead assignments diodes 1. - anode (two die)/open (one die) 2., 4. - cathode 3. - anode
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